| 摘要 |
A crystalline silicon oxidation processing device for solar cell sheet passivation, comprising an oxidation chamber, provided with an air intake device and an illumination device, the illumination device being capable of emitting light with a wavelength within the range of 100 to 5000 nm. The present device generates a silicon oxide layer on the surface of crystalline silicon under low temperature conditions, enhancing surface passivation of crystalline silicon solar cells. The present device is low-cost, simple in structure, stable, and compatible with existing semiconductor and solar cell technology. |
