Semiconductor device and manufacturing method thereof

摘要

A semiconductor device includes a first semiconductor layer (21) formed of a nitride semiconductor on a substrate (11); a second semiconductor layer (22) formed of a nitride semiconductor on the first semiconductor layer; an insulation film (30) including an opening, and being formed on the second semiconductor layer; a source electrode (42) and a drain electrode (43) formed on the second semiconductor layer; and a gate electrode (41) formed at the opening on the second semiconductor layer. Both the insulation film and the second semiconductor layer include carbon in a neighborhood of an interface between the insulation film and the second semiconductor layer.