Substrate-topography-aware lithography modeling

摘要

Described herein is a method for simulating an image formed within a resist layer on a substrate resulting from an incident radiation, the substrate having a first feature and a second feature underlying the resist layer, the method comprising: simulating a first partial image using interaction of the incident radiation and the first feature without using interaction of the incident radiation and the second feature; simulating a second partial image using the interaction of the incident radiation and of the second feature without using the interaction of the incident radiation and the first feature; computing the image formed within the resist layer from the first partial image, and the second partial image; wherein the interaction of the incident radiation and the first feature is different from the interaction of the incident radiation and the second feature.

主权项

1. A method implemented by a computer for simulating an image formed within a resist layer on a substrate resulting from an incident radiation, the substrate having a first feature and a second feature underlying the resist layer that are simultaneously subjected to the incident radiation, the method comprising:
simulating, using the computer, a first partial image within the resist layer that represents interaction of the incident radiation with the first feature exclusive of any interaction of the incident radiation with the second feature; simulating, using the computer, a second partial image within the resist layer that represents interaction of the incident radiation with the second feature exclusive of any interaction of the incident radiation with the first feature; and computing the image formed within the resist layer from the first partial image, and the second partial image; wherein the interaction of the incident radiation with the first feature is different from the interaction of the incident radiation with the second feature.