One-time program cell array circuit and memory device including the same

摘要

A one-time program cell array circuit includes a cell array configured to include a plurality of one-time program memory cells, and to program an inputted program data and output a stored program data as a read data, a code generation circuit configured to generate an error correction code to be programmed in the cell array based on the inputted program data during a program operation; and an error detection circuit configured to detect an error of the read data based on the error correction code and the read data that are outputted from the cell array during a read operation and to be enabled or disabled in response to a first enable signal. The concern caused by applying the error correction scheme to the one-time program cell array circuit may be resolved by controlling the enabling or disabling of an error correction scheme, while increasing reliability.

主权项

1. A one-time program cell array circuit, comprising:
a cell array configured to include a plurality of one-time program memory cells, and to program an inputted program data and output a stored program data as a read data; a code generation circuit configured to generate an error correction code to be programmed in the cell array based on the inputted program data during a program operation; and an error detection circuit configured to detect an error of the read data based on the error correction code and the read data that are outputted from the cell array during a read operation and to be enabled or disabled in response to a first enable signal, wherein the first enable signal is enabled if the program data corresponding to the read data maintains the same value from an initial programming moment, and the first enable signal is disabled otherwise.