Multi-direction design for bump pad structures

摘要

An integrated circuit structure includes a semiconductor chip having a first region and a second region; a dielectric layer formed on the first region and the second region of the semiconductor chip; a first elongated under-bump metallization (UBM) connector formed in the dielectric layer and on the first region of the semiconductor chip and having a first longer axis extending in a first direction; and a second elongated UBM connector formed in the dielectric layer on the second region of the semiconductor chip and having a second longer axis extending in a second direction. The first direction is different from the second direction.

主权项

1. A method, comprising:
forming a first metal pad and a second metal pad over a substrate; forming a dielectric layer over the substrate, over the first metal pad and over the second metal pad, the dielectric layer having a first opening exposing a portion of the first metal pad and a second opening exposing a portion of the second metal pad; forming a first under-bump metallization (UBM) connector in the first opening and contacting the first metal pad; forming a second UBM connector in the second opening and contacting the second metal pad; wherein the first UBM connector has a first longest axis aligned in a first orientation; and wherein the second UBM connector has a second longest axis aligned in a second orientation different from the first orientation.