Semiconductor device having fin-shaped field effect transistor and manufacturing method thereof

摘要

Disclosed is a semiconductor device including: an active region defined by an element isolation region; a gate trench going across the active region to define source/drain regions on both sides thereof, respectively, and to define, between the source/drain regions, the channel region having a first, second, and third protruding portions which are arranged in a gate width direction; and a gate electrode formed in the gate trench so as to cover the channel region through a gate insulating film.

主权项

1. A semiconductor device comprising:
an active region defined by an element isolation region; a gate trench crossing the active region to define source and drain regions on both sides thereof, respectively, and to define a channel region between the source and drain regions, the channel region having a first, second, and third protruding portions arranged in a gate width direction, the third protruding portion being between the first and second protruding portions to define a fin-shaped channel portion and giving the channel region a substantially W-shape; and a gate electrode formed in the gate trench so as to cover the channel region with an intervention of a gate insulating film.