Non-volatile memory programming

摘要

Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying a signal to a line associated with a memory cell, the signal being generated based on digital information. The method can also include, while the signal is applied to the line, determining whether a state of the memory cell is near a target state when the digital information has a first value, and determining whether the state of the memory cell has reached the target state when the digital information has a second value. Other embodiments including additional memory devices and methods are described.

主权项

1. A method comprising:
applying a signal to a line associated with a memory cell, the signal being generated based on digital information; determining whether the memory cell is near a target state when the digital information has a first value and while the signal is applied to the line; and determining whether the memory cell has reached the target state when the digital information has a second value and while the signal is applied to the line, wherein the digital information includes a plurality of values generated in sequential order, the first value of the digital information corresponds to a first value among the plurality of values, the second value of the digital information corresponds to a second value among the plurality of values, and wherein a difference between the second value and the first value is two.