Etch-back type semiconductor package, substrate and manufacturing method thereof

摘要

A semiconductor package, a substrate and a manufacturing method thereof are provided. The substrate comprises a conductive carrier, a first metal layer and a second metal layer. The first metal layer is formed on the conductive carrier and comprises an lead pad having an upper surface. The second metal layer is formed on the first metal layer and comprises a bond pad. The bond pad overlaps and is in contact with the upper surface of the first metal layer. The upper surface of the lead pad is partially exposed. A part of the bond pad overhang outward from the edge of the lead pad.

主权项

1. A substrate, comprising:
a conductive carrier; a first metal layer formed on the conductive carrier, wherein the first metal layer comprises a lead pad and a die-attach pad, both having a first upper surface; and a second metal layer formed on the first metal layer, wherein the second metal layer comprises a bond pad and a die-attach barrier both having a second upper surface; wherein the bond pad overlaps and in contact with the first upper surface of the lead pad, the first upper surface of the lead pad is partially exposed and a part of the bond pad overhangs outward from an edge of the lead pad; wherein the die-attach barrier overlaps and in contact with the first upper surface of the die-attach pad, the die-attach barrier is formed around the die-attach pad, the first upper surface of the die-attach pad is partially exposed and a part of the die-attach barrier overhangs outward from an edge of the die-attach pad.