发明名称 |
Structures and methods for RF de-embedding |
摘要 |
Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures. |
申请公布号 |
US8917083(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201012953810 |
申请日期 |
2010.11.24 |
申请人 |
International Business Machines Corporation |
发明人 |
Groves Robert A.;Lu Ning;Putnam Christopher S.;Thompson Eric |
分类号 |
G01R5/14;G01R27/28;H01L21/66;G01R35/00 |
主分类号 |
G01R5/14 |
代理机构 |
Roberts Mlotkowski Safran & Cole, P.C. |
代理人 |
Cain David;Roberts Mlotkowski Safran & Cole, P.C. |
主权项 |
1. A structure, comprising:
a first set of test structures comprising:
a first device under test (DUT) structure comprising a first capacitor having a first length;a first through structure corresponding to the first DUT structure; anda first open structure corresponding to the first DUT structure; and a second set of test structures comprising:
a second device under test (DUT) structure comprising a second capacitor having a second length different than the first length but otherwise identical to the first capacitor;a second through structure corresponding to the second DUT structure; anda second open structure corresponding to the second DUT structure. |
地址 |
Armonk NY US |