Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum

摘要

Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride at one or more surfaces of the substrate, and a layer of GaN bonded to the molybdenum nitride.

主权项

1. A method of fabricating a semiconductor structure, comprising:
forming molybdenum nitride at an at least substantially planar surface of a substrate comprising molybdenum; and bonding a layer of GaN directly to an exposed major surface of the molybdenum nitride at the at least substantially planar surface of the substrate.