Method for forming semiconductor structure having through silicon via for signal and shielding structure

摘要

A method for forming a through silicon via for signal and a shielding structure is provided. A substrate is provided and a region is defined on the substrate. A radio frequency (RF) circuit is formed in the region on the substrate. A through silicon trench (TST) and a through silicon via (TSV) are formed simultaneously, wherein the TST encompasses the region to serve as a shielding structure for the RF circuit. A metal interconnection system is formed on the substrate, wherein the metal interconnection system comprises a connection unit that electrically connects the TSV to the RF circuit to provide a voltage signal.

主权项

1. A method for forming a through silicon via for signal and a shielding structure, comprising:
providing a substrate, wherein a region is defined on the substrate; forming an radio frequency (RF) circuit in the region on the substrate; forming a through silicon trench (TST) and a through silicon via (TSV) simultaneously, wherein the TST encompasses the region; and forming a metal interconnection system on the substrate, wherein the metal interconnection system comprises a connection unit that electrically connects the TSV to the RF circuit to provide a voltage signal, and the TST serve as a shielding structure for the RF circuit wherein the step of simultaneously forming the TST and the TSV comprises simultaneously forming a trench and a via, wherein the trench encompasses the via.