Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing

摘要

A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.

主权项

1. A three-dimensional thin-film semiconductor substrate for fabricating a partially transparent three-dimensional thin-film solar cell, comprising:
a plurality of top surface areas substantially aligned along a (100) crystallographic plane of the semiconductor substrate and defining a base opening of an inverted pyramidal surface cavity on said top surface of the semiconductor substrate; a plurality of walls each substantially aligned along a (111) crystallographic orientation plane of the semiconductor substrate wherein said walls form a plurality of at least two differently sized three-dimensional inverted pyramidal cavities comprising a larger set of three-dimensional inverted pyramidal cavities and a smaller set of three-dimensional inverted pyramidal cavities wherein said larger set of inverted pyramidal cavities and said smaller set of inverted pyramidal cavities are arranged in a staggered pattern on said semiconductor substrate; a plurality of selectively formed through-holes in said semiconductor substrate with openings having diagonals in the range of 50 to 300 microns and positioned between the front and back lateral surface planes of said semiconductor substrate which form a partially transparent three-dimensional thin-film semiconductor substrate, wherein said semiconductor substrate has an inverted pyramidal structure with a layer thickness in the range of 1 to 60 microns and a substrate peak to peak thickness in the range of approximately 100 to 500 microns.