发明名称 |
Storage device with buffer memory including non-volatile RAM and volatile RAM |
摘要 |
A storage device includes a flash memory, a buffer memory and a memory controller. The buffer memory is configured to temporarily store write data to be written in the flash memory, the buffer memory including volatile RAM and non-volatile RAM. The memory controller is configured to select one of the volatile RAM and the non-volatile RAM to temporally store the write data based on a write pattern of the write data, and to transmit a host command complete signal to a host when the write data is stored in the non-volatile RAM. |
申请公布号 |
US8918580(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201213404311 |
申请日期 |
2012.02.24 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Cheon Wonmoon |
分类号 |
G06F12/00;G06F12/06;G06F12/08;G06F13/16 |
主分类号 |
G06F12/00 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A storage device comprising:
a flash memory; a buffer memory configured to temporarily store write data to be written in the flash memory, the buffer memory comprising volatile RAM and non-volatile RAM; and a memory controller configured to select one of the volatile RAM and the non-volatile RAM to temporally store the write data based on a write pattern of the write data, and to transmit a host command complete signal to a host when the write data is stored in the non-volatile RAM, wherein the memory controller is configured to store a random pattern write data in the non-volatile RAM temporarily and to store a sequential pattern write data in the volatile RAM temporarily. |
地址 |
Suwon-si, Gyeonggi-do KR |