Non-uniform channel junction-less transistor

摘要

The present disclosure discloses a method of forming a semiconductor layer on a substrate. The method includes patterning the semiconductor layer into a fin structure. The method includes forming a gate dielectric layer and a gate electrode layer over the fin structure. The method includes patterning the gate dielectric layer and the gate electrode layer to form a gate structure in a manner so that the gate structure wraps around a portion of the fin structure. The method includes performing a plurality of implantation processes to form source/drain regions in the fin structure. The plurality of implantation processes are carried out in a manner so that a doping profile across the fin structure is non-uniform, and a first region of the portion of the fin structure that is wrapped around by the gate structure has a lower doping concentration level than other regions of the fin structure.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a semiconductor layer on a substrate; patterning the semiconductor layer into a fin structure; forming a gate dielectric layer and a gate electrode layer over the fin structure; patterning the gate dielectric layer and the gate electrode layer to form a gate structure in a manner so that the gate structure wraps around a portion of the fin structure; and performing a plurality of implantation processes to form source/drain regions in the fin structure, the plurality of implantation processes being carried out in a manner so that a doping profile across the fin structure is non-uniform including a first region having a first doping concentration level, a second region extending from the first region and partially wrapped around by the gate structure and having a second doping concentration level that is different than the first doping concentration level, and a third region extending from the second region but not wrapped around by the gate structure and having a third doping concentration level that is different than the second doping concentration level, wherein the first, second, and third regions all have the same doping polarity.