| 发明名称 | Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same | ||
| 摘要 | When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis. | ||
| 申请公布号 | US8916124(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US200812745809 | 申请日期 | 2008.11.27 |
| 申请人 | Ricoh Company, Ltd. | 发明人 | Minemoto Hisashi;Yamada Osamu;Hatakeyama Takeshi;Hoshikawa Hiroaki;Tokunou Yasunori |
| 分类号 | C01B21/06;C30B29/38;C30B15/00;C30B19/00;C30B7/00;C30B9/00;C30B11/00;C30B17/00;C30B21/02;C30B23/00;C30B25/00;C30B29/10;C30B29/40;C30B19/06;C30B9/10;C30B19/02 | 主分类号 | C01B21/06 |
| 代理机构 | Cooper & Dunham LLP | 代理人 | Cooper & Dunham LLP |
| 主权项 | 1. A method for growing a group III nitride crystal, the method comprising: growing a group III nitride crystal in a pressurized atmosphere of a nitrogen-containing gas from a melt comprising at least a group III element, nitrogen and an alkali metal or an alkali earth metal; and swinging a melt-holding vessel about two axes simultaneously, the melt-holding vessel holding, the melt, wherein the two axes are different in direction from each other, and wherein an angle between the two axes is 90° or approximately 90°. | ||
| 地址 | Tokyo JP | ||