Multichip power semiconductor device

摘要

An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted on and electrically connected to the first chip carrier. A second power semiconductor chip is mounted on and electrically connected to the second chip carrier. An electrically insulating material is configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip. An electrical interconnect is configured to electrically connect the first power semiconductor chip to the second power semiconductor chip, wherein the electrical interconnect has at least one of a contact clip and a galvanically deposited conductor.

主权项

1. An electronic device, comprising:
a first chip carrier; a second chip carrier isolated from the first chip carrier, wherein the first and second chip carriers each comprise a double layer structure comprising an upper layer and a lower layer connected to the upper layer by vias; a first power semiconductor chip mounted on and electrically connected to the upper layer of the double layer structure of the first chip carrier; a second power semiconductor chip mounted on and electrically connected to the upper layer of the double layer structure of the second chip carrier; an electrically insulating material configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip; and an electrical interconnect configured to electrically connect a load electrode of the first power semiconductor chip to a load electrode of the second power semiconductor chip.