Resistive memory device and method for manufacturing the same

摘要

A resistive memory device and a method for manufacturing the same are provided. The resistive memory device includes a lower electrode, a variable resistive layer formed on the lower electrode and configured so that the volume thereof is contracted or expanded according to temperature, and an upper electrode formed on the variable resistive layer. At least a portion of the lower electrode is configured to be electrically connected to the upper electrode.

主权项

1. A resistive memory device, comprising:
a lower electrode; a variable resistive layer formed over the lower electrode and configured such that volume of itself is contracted or expanded according to temperature, and configured such that an upper surface of the variable resistive layer is spaced from the upper electrode according to the temperature; and an upper electrode formed over the variable resistive layer, wherein at least a portion of the lower electrode is configured to be electrically connected to the upper electrode.