Optical semiconductor device

摘要

The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.

主权项

1. An optical semiconductor device comprising:
a conductive semiconductor substrate; a light absorbing layer formed on the conductive semiconductor substrate; and a conductive semiconductor layer formed on the light absorbing layer, wherein the conductive semiconductor layer comprises a plurality of diffusion regions each having a conductive property opposite to a conductive property of the conductive semiconductor substrate thereby to form light receiving elements in an array in the optical semiconductor device, each light receiving element comprising a light receiving section through which light passes into the light receiving element along an optical axis; and the conductive semiconductor substrate comprises a mirror-like thin film on a bottom thereof, wherein the mirror-like thin film comprises an insulating film positioned on a metal, the mirror-like thin film exhibiting specular reflection, the mirror-like thin film being aligned with the optical axis of one of the light receiving sections.