Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process

摘要

A method of encapsulating a ferroelectric capacitor or ferroelectric memory cell includes forming encapsulation materials adjacent to a ferroelectric capacitor. forming a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and forming an FEO encapsulation layer over the ferroelectric oxide to provide additional protection from hydrogen induced degradation.

主权项

1. A method of encapsulating a ferroelectric capacitor, comprising:
forming a ferroelectric oxide (FEO) over an encapsulated ferroelectric capacitor, the ferroelectric oxide comprising a dielectric material; planarizing the FEO by chemical mechanical polishing to form a planarized FEO; forming FEO encapsulation materials over the planarized FEO; and forming a metal 1 (M1) layer over the FEO encapsulation materials, wherein forming the FEO encapsulation materials comprise an encapsulation layer and a barrier layer overlying the encapsulation layer to prevent a reaction between the encapsulation layer and the M1 layer, wherein the encapsulation layer and the barrier layer are each between 50 and 1000 Angstroms thick.