| 摘要 |
<p>The present technology provides a nonvolatile memory device and a manufacturing method thereof, capable of improving operation features and integration and implementing the nonvolatile memory device with a preset logic process without an additional process. Provided is the nonvolatile memory device which includes a control plug which is formed on a substrate, a floating gate which is formed on the substrate, is adjacent to the control plug with a gap, and surrounds the control plug, and a charge blocking layer which is formed on the sidewall of the floating gate and fills the gap.</p> |
