| 发明名称 | Semiconductor device and operating method thereof | ||
| 摘要 | There is disclosed an operating method of a semiconductor device including programming a memory cell by supplying a program voltage to a control gate of the memory cell and a detrap voltage to a well which is formed in a semiconductor substrate, and subsequently removing electrons trapped in a tunnel insulating layer of the memory cell by supplying a voltage lower than the detrap voltage to the control gate while also supplying the detrap voltage to the well before the programmed memory cell is verified. | ||
| 申请公布号 | US8917555(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201213455439 | 申请日期 | 2012.04.25 |
| 申请人 | Hynix Semiconductor Inc. | 发明人 | Baek Yong Mook |
| 分类号 | G11C16/10;G11C16/12;G11C16/06;G11C16/34;G11C16/04 | 主分类号 | G11C16/10 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. An operating method of a semiconductor device, comprising: programming a memory cell by supplying a program voltage to a control gate of the memory cell and a detrap voltage to a well which is formed in a semiconductor substrate, wherein the detrap voltage has a positive voltage lower than the program voltage; and subsequently removing electrons trapped in a tunnel insulating layer of the memory cell by supplying a voltage lower than the detrap voltage to the control gate while also supplying the detrap voltage to the well before the programmed memory cell is verified. | ||
| 地址 | Gyeonggi-do KR | ||