发明名称 |
Light emitting diode (LED) using carbon materials |
摘要 |
Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material. |
申请公布号 |
US8916405(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201113270362 |
申请日期 |
2011.10.11 |
申请人 |
International Business Machines Corporation |
发明人 |
Guo Dechao;Han Shu-Jen;Wong Keith Kwong Hon;Yuan Jun |
分类号 |
H01L21/00;H01L33/26;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
Alexanian Vazken;Chang, LLC Michael J. |
主权项 |
1. A method of fabricating a LED, comprising the steps of:
providing a substrate; forming an insulator layer on the substrate, wherein the insulator layer has a bilayer configuration; after the insulator layer has been formed on the substrate, forming a first bottom gate and a second bottom gate embedded in the insulator layer such that the first bottom gate and the second bottom gate extend only part way through the insulator layer and a portion of the insulator layer separates the first bottom gate and the second bottom gate from the substrate; depositing a gate dielectric on the first and second bottom gates; depositing a carbon material directly on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material as deposited covers only a portion of the gate dielectric and serves as a channel region of the LED; and forming metal source and drain contacts directly on the gate dielectric and which cover a portion of, and are in contact with, the carbon material. |
地址 |
Armonk NY US |