Method for manufacturing a carbon nanotube field emission device with overhanging gate

摘要

A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.

主权项

1. A semiconductor process applied to a wafer, the wafer comprising a silicon substrate; a first insulator layer on the silicon substrate; a first silicon layer on the first insulator layer; a second insulator layer on the first silicon layer; and a second silicon layer on the second insulator layer; the semiconductor process comprising:
etching through the second silicon layer, through the second insulator layer, and through the first silicon layer to the first insulator layer to define a hole; lateral etching in the first silicon layer to laterally enlarge the hole at the first silicon layer; etching through the first insulator layer to the substrate, so that the hole has a bottom that includes the substrate; depositing a removable material on the wafer; and forming an array of carbon nanotubes at the bottom of the hole on the substrate.