| 发明名称 |
CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| 摘要 |
The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon. |
| 申请公布号 |
US8916061(B2) |
申请公布日期 |
2014.12.23 |
| 申请号 |
US201313799680 |
申请日期 |
2013.03.13 |
| 申请人 |
Cabot Microelectronics Corporation |
发明人 |
Reiss Brian;Willhoff Michael;Mateja Daniel |
| 分类号 |
H01L21/3063;H01L21/306;C09K3/14;H01L21/3105;C09G1/02 |
主分类号 |
H01L21/3063 |
| 代理机构 |
|
代理人 |
Omholt Thomas E;Barnett Derek W;Hornilla Arlene |
| 主权项 |
1. A chemical-mechanical polishing composition comprising:
(a) a ceria abrasive, (b) cations of one or more lanthanide metals, (c) one or more nonionic polymers selected from the group consisting of alkylene oxide, containing polymers, acrylamide polymers, and mixtures thereof, (d) one or more phosphinocarboxylate polymers, and (e) water. |
| 地址 |
Aurora IL US |
