发明名称 Semiconductor memory device and method of testing the same
摘要 A semiconductor memory device includes a write controller configured to transmit a first input data that is supplied through a first pad, to a first global I/O line and a second global I/O line when a write operation is executed in a test mode. The semiconductor memory device further includes a first write driver configured to store the first input data via the first global I/O line in a first cell block when the write operation is executed in the test mode. The semiconductor memory device further includes a first I/O line driver configured to supply signals to the first global I/O line and a first test I/O line in response to a first output data supplied from the first cell block when a read operation is executed in the test mode.
申请公布号 US8917572(B2) 申请公布日期 2014.12.23
申请号 US201213719066 申请日期 2012.12.18
申请人 SK hynix Inc. 发明人 Chu Shin Ho
分类号 G11C8/00;G11C7/00;G11C29/08;G11C29/34;G11C29/12;G11C29/26 主分类号 G11C8/00
代理机构 Kilpatrick Townsend & Stockton LLP 代理人 Kilpatrick Townsend & Stockton LLP
主权项 1. A semiconductor memory device comprising: a write controller configured to transmit a first input data from a first pad to a first global I/O line and a second global I/O line when a write operation is executed during a test mode; a first write driver configured to transfer the first input data from the first global I/O line to a first cell block so as to cause the first input data to be stored in the first cell block when the write operation is executed during the test mode; and a first I/O line driver configured to supply signals to the first global I/O line and to a first test I/O line in response to receiving a first output data from the first cell block when a read operation is executed during the test mode.
地址 Icheon-si KR