Nonvolatile memory devices, operating methods thereof and memory systems including the same

摘要

Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.

主权项

1. An operating method, comprising:
floating a first ground select line connected to a first string connected to a bit line; applying an erase prohibition voltage to a second ground select line connected to a second string connected to the bit line,
the first and second strings each including a plurality of memory cells stacked on top of each other in a direction normal to a substrate; applying an erase operation voltage to the first and second strings; and applying a ground voltage to a plurality of word lines connected to the first and second strings during the applying the erase operation voltage to the first and second strings.