发明名称 |
Nonvolatile memory device and method of making the same |
摘要 |
A nonvolatile memory device includes a substrate, a structure including a stack of alternately disposed layers of conductive and insulation materials disposed on the substrate, a plurality of pillars extending through the structure in a direction perpendicular to the substrate and into contact with the substrate, and information storage films interposed between the layers of conductive material and the pillars. In one embodiment, upper portions of the pillars located at the same level as an upper layer of the conductive material have structures that are different from lower portions of the pillars. In another embodiment, or in addition, upper string selection transistors constituted by portions of the pillars at the level of an upper layer of the conductive material are programmed differently from lower string selection transistors. |
申请公布号 |
US8916926(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201113310407 |
申请日期 |
2011.12.02 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Choe Byeong-In;Shim Sunil;Jang Sung-Hwan;Lee Woonkyung;Jang Jaehoon |
分类号 |
H01L27/115;G11C16/04;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A nonvolatile memory device comprising:
a substrate; a stack of alternately disposed layers of electrically conductive and insulating materials on the substrate; a plurality of pillars extending through the stack in a direction perpendicular to the substrate and disposed in contact with the substrate; and information storage films interposed between the layers of conductive material and the pillars, wherein each of the pillars comprise a channel section adjacent the layers of conductive material and constituting vertical channels at substantially the same levels as the layers of conductive material, respectively, and an upper portion of the channel section adjacent an upper one of the layers of conductive material has a different degree of conductivity from each of remaining portions of the channel section adjacent the other layers of conductive material, respectively. |
地址 |
Suwon-si, Gyeonggi-do KR |