| 主权项 |
1. A light emitting apparatus comprising:
a body; a first electrode having a protrusion pattern on the body; a second electrode physically separated from the first electrode on the body; an adhesive layer on the first electrode including the protrusion pattern; and a light emitting chip on the adhesive layer, wherein the light emitting chip comprises a substrate on the adhesive layer and a light emitting structure on the substrate, wherein the light emitting structure has a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the adhesive layer is disposed between the light emitting chip and the first electrode, and the adhesive layer is directly contacted with a bottom surface of the light emitting chip, wherein the protrusion pattern is disposed under the light emitting chip, wherein the second electrode comprises an edge portion nearest to the first electrode, wherein a topmost surface of the protrusion pattern under the light emitting chip is higher than a topmost surface of the edge portion of the second electrode, wherein the adhesive layer includes a metal including Au-Sn, and the protrusion pattern includes a metal including Au, wherein at least one of the first conductive semiconductor layer and the second conductive semiconductor layer has a AlGaN layer, wherein the active layer has a semiconductor material having a compositional formula of InxAlyGa1-x-yN (where 0≦x≦1, 0≦y≦1, 0≦x+y≦1), and wherein a distance from a bottom surface of the second electrode to a top surface of the protrusion pattern is greater than a thickness of the first electrode. |
