Semiconductor device having epitaxial semiconductor layer above impurity layer

摘要

The semiconductor device includes a first transistor including a first impurity layer of a first conductivity type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, and a first gate electrode formed above the first gate insulating film, and a second transistor including a second impurity layer of the second conductivity type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and having a thickness different from that of the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer and having a film thickness equal to that of the first gate insulating film and a second gate electrode formed above the second gate insulating film.

主权项

1. A method of manufacturing a semiconductor device comprising:
forming a first impurity layer of a first conductivity type in a first region of a semiconductor substrate; forming a second impurity layer of a second conductivity type in a second region of the semiconductor substrate; epitaxially growing a semiconductor layer above the semiconductor substrate with the first impurity layer and the second impurity layer formed in; forming above the semiconductor layer a mask covering the first region and exposing the second region; removing a part of the semiconductor layer by using the mask to thin a thickness of the semiconductor layer in the second region; removing the mask; forming a first gate insulating film above the semiconductor layer in the first region and a second gate insulating film of a film thickness equal to a film thickness of the first gate insulating film above the semiconductor layer in the second region; and forming a first gate electrode and a second gate electrode respectively above the first gate insulating film and above the second gate insulating film.