Methods of manufacturing light to current converter devices

摘要

Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.

主权项

1. A method for making a light to current converter device, the method comprising:
generating a via hole through a semiconductor substrate of a first conductive type, the via hole extending from a front surface of the semiconductor substrate to a rear surface of the semiconductor substrate; forming a textured front surface on the front surface of the semiconductor substrate; forming a textured rear surface on the rear surface of the semiconductor substrate; forming a semiconductor layer of a second conductive type on at least the textured front surface, the textured rear surface, and an inner surface of the via hole, wherein the second conductive type is opposite the first conductive type; and etching the semiconductor layer of the second conductive type, wherein etching the semiconductor layer of the second conductive type comprises:
removing the semiconductor layer of the second conductive type formed on the textured rear surface; andremoving all of the semiconductor layer of the second conductive type formed on the inner surface of the via hole.