| 摘要 |
<p>The present invention relates to a semiconductor memory device, a memory system including the same, and an operating method thereof, and comprises: a memory cell array including a plurality of memory cells; and a plurality of page buffers to sense data of the memory cells by sensing bit line current and to supply the current to the bit lines connected to the memory cells in sensing operation. The page buffers make current pass which connects ground voltages with the bit line according to program context of the memory cells.</p> |
