| 摘要 |
<p>Disclosed is a plasma etching apparatus using a magnetic material, which includes: a process chamber; a first electrode disposed at an inner upper portion of the process chamber; an etching target provided under the first electrode; a mask formed with a predetermined pattern used for manufacturing a semiconductor and provided on the etching target; a magnet disposed under the etching target to allow the mask to adhere to a surface of the etching target; and a second electrode disposed under the process chamber in opposition to the first electrode to form plasma between a discharge area between the first and second electrodes. Thus, according to the present invention, the quality degradation caused by etching diffusion due to the degradation of adhering force between the etching target and the mask can be prevented. Since only a desired portion of the etching target can be etched, the etching efficiency and quality can be remarkably improved.</p> |
