发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, memory strings formed above the semiconductor substrate, and a control circuit configured to control voltages applied to the memory cells. In a read operation, when the control circuit precharges a first source line electrically connected to a selected memory string to a first voltage, the control circuit precharges a second source line electrically connected to an unselected memory string to a second voltage, the second voltage being higher than the first voltage, and after the second source line is precharged, the control circuit precharges a first bit line electrically connected to the selected memory string to the second voltage. |
申请公布号 |
US8917557(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201213715317 |
申请日期 |
2012.12.14 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Sakaguchi Natsuki;Maejima Hiroshi |
分类号 |
G11C11/34;G11C16/10;G11C16/04;G11C16/24;G11C16/26;G11C7/06 |
主分类号 |
G11C11/34 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A nonvolatile semiconductor memory device comprising:
a semiconductor substrate; memory strings formed above the semiconductor substrate, each memory string including a plurality of memory cells, a part of memory cells being configured to stacked above the semiconductor substrate; and a control circuit configured to control a plurality of voltages applied to the memory cells, wherein in a read operation, when the control circuit precharges a first source line electrically connected to a selected memory string to a first voltage, the control circuit precharges a second source line electrically connected to an unselected memory string to a second voltage, the second voltage being higher than the first voltage, and after the second source line is precharged, the control circuit precharges a first bit line electrically connected to the selected memory string to the second voltage. |
地址 |
Tokyo JP |