发明名称 |
Method of manufacturing a display device comprising first and second polarizing plate and phase difference plate combinations and a step of simultaneously polishing a second substrate and a semiconductor chip to have the same thickness as each other |
摘要 |
A display device including: a first substrate with a pixel switch and drivers mounted thereon; a second substrate disposed in facing relation to the first substrate; a material layer held between the first substrate and the second substrate and having peripheral edges sealed by a seal member, the material layer having an electrooptical effect; and a semiconductor chip mounted as a COG component on the first substrate, the semiconductor chip having a control system configured to control the drivers; wherein the semiconductor chip having a thickness equal to the total thickness of the seal member and the second substrate or larger than the thickness of the seal member and smaller than the total thickness. |
申请公布号 |
US8917372(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201414295627 |
申请日期 |
2014.06.04 |
申请人 |
Japan Display West Inc. |
发明人 |
Ino Masumitsu |
分类号 |
G02F1/1345;G02F1/13;H01J9/20 |
主分类号 |
G02F1/1345 |
代理机构 |
Dentons US LLP |
代理人 |
Dentons US LLP |
主权项 |
1. A method of manufacturing a display device having a first substrate with a pixel switch and drivers mounted thereon, a second substrate disposed in facing relation to said first substrate, a material layer between said first substrate and said second substrate, a first polarizing plate and phase difference plate combination disposed between said first substrate and said material layer, a second polarizing plate and phase difference plate combination disposed between said second substrate and said material layer, and a seal member sealing said material layer, the method comprising:
a first step of mounting a semiconductor chip having a control system configured to control said drivers, as a COG component on said first substrate parallel to a region in which said seal member and said second substrate are stacked; a second step of filling a space around said semiconductor chip with a protective fixing member thereby to secure said first substrate and said semiconductor chip to each other; and a third step of simultaneously polishing said second substrate and said semiconductor chip to the same thickness as each other. |
地址 |
Aichi JP |