| 发明名称 | Semiconductor device and method for manufacturing semiconductor device | ||
| 摘要 | According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure. | ||
| 申请公布号 | US8916881(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201314023177 | 申请日期 | 2013.09.10 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Yanase Naoko;Masuko Shingo;Yasumoto Takaaki;Ohara Ryoichi;Kakiuchi Yorito;Noda Takao;Sano Kenya |
| 分类号 | H01L29/15;H01L31/0312;H01L29/16;H01L29/06;H01L29/861;H01L29/45;H01L29/78;H01L29/04;H01L29/66;H01L21/04;H01L29/40 | 主分类号 | H01L29/15 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor device comprising: a SiC layer of a first conductivity type having a hexagonal crystal structure; a first SiC region of a second conductivity type selectively provided in the SiC layer, the first SiC region having a hexagonal crystal structure; a second SiC region of the second conductivity type selectively provided in the first SiC region, the second SiC region having a cubic crystal structure; and a conductive layer of the second conductivity type provided on the second SiC region, and being in contact with the second SiC region, wherein the first and second conductivity types are opposite conductivity types. | ||
| 地址 | Tokyo JP | ||