发明名称 Structures and methods for improving solder bump connections in semiconductor devices
摘要 Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a via formed in a dielectric layer to expose a contact pad and a capture pad formed in the via and over the dielectric layer. The capture pad has openings over the dielectric layer to form segmented features. The solder bump is deposited on the capture pad and the openings over the dielectric layer.
申请公布号 US8916464(B2) 申请公布日期 2014.12.23
申请号 US200812344711 申请日期 2008.12.29
申请人 International Business Machines Corporation 发明人 Daubenspeck Timothy H.;Gambino Jeffrey P.;Muzzy Christopher D.;Sauter Wolfgang;Sullivan Timothy D.
分类号 H01L23/488;H01L21/44;H01L23/00 主分类号 H01L23/488
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Cain David;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. A method of manufacturing a semiconductor structure, comprising: forming a capture pad structure over an insulative material and a via formed therein to contact an underlying contact pad; segmenting the capture pad structure over the insulative material surrounding the via such that openings are formed in the capture pad structure over the insulative material to form a plurality of capture pad structure openings surrounding the via; and forming a solder bump over capture pad structure and between the segments.
地址 Armonk NY US