Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon

摘要

Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays.

主权项

1. A method of growing single crystal semiconductor film comprising the steps of:
providing a substrate; placing a thin strip of single crystal semiconductor at one end of the substrate; depositing a eutectic alloy film in solid phase on a surface of the single crystal strip and the substrate; directing a heated line source on top of the single crystal strip; and scanning the heated line source away from the single crystal strip propagating its crystal orientation across the entire semiconductor thin film, said eutectic alloy thin film remains entirely in solid phase during the heated line scan.