| 发明名称 | Adhesion between post-passivation interconnect structure and polymer | ||
| 摘要 | An embodiment integrated circuit structure includes a substrate, a metal pad over the substrate, a post-passivation interconnect (PPI) structure over the substrate and electronically connected to the metal pad, a thin oxide film layer directly over a top surface of the PPI structure, and a polymer layer over the thin oxide film layer and PPI structure. | ||
| 申请公布号 | US8916972(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201313800653 | 申请日期 | 2013.03.13 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lin Jing-Cheng;Hung Jui-Pin;Lin Min-Chen;Lin Yi-Hang |
| 分类号 | H01L23/48;H01L21/44;H01L23/00 | 主分类号 | H01L23/48 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. An integrated circuit structure comprising: a substrate; a metal pad over the substrate; a passivation layer over the substrate and covering an edge portion of the metal pad; a post-passivation interconnect (PPI) structure over the passivation layer and electronically connected to the metal pad; a thin oxide film layer directly over a top surface of the PPI structure; and a polymer layer over the thin oxide film layer and PPI structure. | ||
| 地址 | Hsin-Chu TW | ||