| 发明名称 | Imaging device, method of manufacturing the same, and electronic apparatus | ||
| 摘要 | A solid-state imaging device includes: a substrate which is formed of a semiconductor and includes a first surface and a second surface which face opposite sides; a gate insulation film which is formed on a trench formed in the substrate to penetrate the first surface and the second surface; and a gate electrode which is embedded in the trench through the gate insulation film to be exposed to a second surface side of the substrate. A step difference is formed from the second surface of the substrate to a tip end surface of the gate electrode on the second surface side. | ||
| 申请公布号 | US8916916(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201213358258 | 申请日期 | 2012.01.25 |
| 申请人 | Sony Corporation | 发明人 | Togashi Hideaki |
| 分类号 | H01L31/0216;H01L27/146;H01L21/768 | 主分类号 | H01L31/0216 |
| 代理机构 | Dentons US LLP | 代理人 | Dentons US LLP |
| 主权项 | 1. A solid-state imaging device comprising: a semiconductor substrate including a first surface and a second surface that face opposite sides; a gate insulation film on a trench formed in the semiconductor substrate to penetrate the first surface and the second surface; at least one photodiode disposed in the semiconductor substrate; and a gate electrode embedded in the trench through the gate insulation film to be exposed to a second surface side of the semiconductor substrate, wherein, the second surface of the semiconductor substrate is below a region of the semiconductor substrate in which the at least one photodiode is disposed, anda step difference exists between the second surface of the semiconductor substrate and at least one of (a) a tip end surface of the gate electrode on the second surface side and (b) a tip end surface of the gate insulation film on the second surface side. | ||
| 地址 | Tokyo JP | ||