| 摘要 |
In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface. |
| 主权项 |
1. A semiconductor light emitting element comprising:
a semiconductor layer including a light emitting layer that emits light by current flow, wherein the semiconductor layer has a semiconductor side surface including a first semiconductor side surface extending along a first direction and a second semiconductor side surface extending along a second direction intersecting the first direction, a semiconductor top surface, and a semiconductor bottom surface, the semiconductor top surface and the semiconductor bottom surface being connected with the semiconductor side surface and facing each other, on the first semiconductor side surface, a plurality of first depressing portions, each of which extends along a third direction proceeding from the semiconductor bottom surface toward the semiconductor top surface and depresses toward an inside of the semiconductor layer, and a plurality of first projecting portions, each of which extends along the third direction and projects toward an outside of the semiconductor layer compared to the first depressing portions are provided in an alternate arrangement along the first direction, on the second semiconductor side surface, a plurality of second depressing portions, each of which extends along the third direction and depresses toward the inside of the semiconductor layer, and a plurality of second projecting portions, each of which extends along the third direction and projects toward the outside of the semiconductor layer compared to the second depressing portions are provided in an alternate arrangement along the second direction, and projections and depressions formed on the first semiconductor side surface by the first depressing portions and the first projecting portions and projections and depressions formed on the second semiconductor side surface by the second depressing portions and the second projecting portions are different in shape. |
