| 发明名称 | Resistance change device and memory cell array | ||
| 摘要 | According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode. | ||
| 申请公布号 | US8916848(B2) | 申请公布日期 | 2014.12.23 |
| 申请号 | US201213598305 | 申请日期 | 2012.08.29 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Fujii Shosuke;Matsushita Daisuke;Mitani Yuichiro |
| 分类号 | H01L47/00;H01L45/00;H01L27/24;G11C13/00 | 主分类号 | H01L47/00 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A resistance change device comprising: a first electrode including a metal which contains at least one of Ag, Ti, Co, Cr, Cu, W, Hf, Ta and Zr; a second electrode; and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode, wherein the second electrode is impurities-doped Si, and a concentration of O in the amorphous oxide layer increases in the direction from the first electrode to the second electrode. | ||
| 地址 | Tokyo JP | ||