| 摘要 |
<p>The present invention relates to a semiconductor memory device and an operating method of the semiconductor memory device. The semiconductor memory device conduct a program loop including a programming operation and a program verifying operation based on a target verification voltage and a sub-verification voltage smaller than the target verification voltage in memory cell until the threshold voltage of the memory cells becomes larger than the target verification voltage. When the programming operation is conducted, a positive voltage, which is applied to the bit-lines of the memory cells having the threshold voltage larger than the sub-verification voltage, is increased each time the programming operation is conducted, thereby improving the threshold voltage distribution of the memory cells.</p> |
