| 摘要 |
<p>The present invention relates to a light emitting device. The light emitting device according to the embodiment of the present invention includes: a first conductive semiconductor layer (112); an active layer (114) which includes a quantum wall (114b) and a quantum well on the first conductive semiconductor layer (112); an undoped last barrier layer (127) which is formed on the active layer (114); an Al_xIn_yGa_(1-x-y)N layer (128) which is formed on the undoped last barrier layer (127); and a second conductive semiconductor layer (116) which is formed on the Al_xIn_yGa_(1-x-y)N layer (128). The undoped last barrier layer (127) includes a first In_p1Ga_(1-p1)N layer, an Al_qGa_(1-q)N layer and a second Inp_2Ga_(1-p2)N layer.</p> |
