POWER SEMICONDUCTOR DEVICE

摘要

A power semiconductor device according to the embodiment of the present invention includes a substrate, an epitaxial layer which is arranged on the substrate, a passivation layer which is arranged on the epitaxial layer, a gate electrode which is arranged on the epitaxial layer by passing through the passivation layer, a gate insulation layer which is arranged between the gate electrode and the epitaxial layer, and a source contact and a drain contact which are in contact with the epitaxial layer by passing through the passivation layer and are arranged to be separated from the gate electrode.