| 摘要 |
Disclosed is a process for producing a high-performance semiconductor light-emitting element substrate, which has a reduced production time. Specifically disclosed is a process for producing a semiconductor light-emitting element substrate, which is characterized by comprising: a substrate heating step (S3) of heating a substrate; a substrate washing step (S6) of washing the substrate (S); a dielectric material layer formation step (S7) of depositing dielectric material layers (H, L) on the substrate (S); a substrate heating termination step (S8) of terminating the heating of the substrate; a cooling step (S9) of absorbing a radiation heat by means of cooling means (11, 12, 13) to cool the substrate (S) and a substrate supporting means (3); and a reflective layer formation step (S11) of depositing a reflective layer (R) on the dielectric material layers (H, L). |
