| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of testing quality of a plurality of memory cells in parallel and reducing a cost, and to provide a testing method of the semiconductor storage device.SOLUTION: In a test mode, a bypass path B0 becomes in a conductive state, data inputted to a DQ terminal DQ0 is held as input data for a DQ terminal DQ1 in accordance with transition of a first direction of a CLK signal, and the data inputted to the DQ terminal DQ0 is held as input data for the DQ0 in accordance with transition of a second direction of the CLK signal. |
