| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device, along with a manufacturing method for the semiconductor device, capable of forming a high resistance part and a low resistance part of the same semiconductor substrate while suppressing increase in manufacturing steps.SOLUTION: A semiconductor device 1 includes a semiconductor substrate 3, and a high resistance part 10 and a low resistance part 20 formed above a predetermined upper surface part 3a of the semiconductor substrate 3. The high resistance part 10 includes a first conductive film 12, and an oxidizing film 14 which is arranged to cover the first conductive film 12 and is provided by oxidizing the material of first conductive film 12. The low resistance part 20 contains a second conductive film 22 made from the same conductive material as the first conductive film 12. Further, the second conductive film 22 is formed thicker than the first conductive film 12.</p> |
