| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a semiconductor device includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench and a second trench, forming a first conductive layer along sidewall surfaces and bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and bottom surface of the second trench, forming a mask pattern on the second conductive layer, the mask pattern filling the second trench and being a bottom anti-reflective coating (BARC), and removing the first conductive layer using the mask pattern. |
| 申请公布号 |
US2014370699(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201314145188 |
申请日期 |
2013.12.31 |
| 申请人 |
Kim Ju-Youn;Lee Chul-Woong;Kim Tae-Sun;Park Sang-Duk;Youn Bum-Joon;Ha Tae-Won |
发明人 |
Kim Ju-Youn;Lee Chul-Woong;Kim Tae-Sun;Park Sang-Duk;Youn Bum-Joon;Ha Tae-Won |
| 分类号 |
H01L21/308;H01L21/28 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench and a second trench; forming a first conductive layer along sidewall surfaces and a bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and a bottom surface of the second trench; forming a mask pattern on the second conductive layer, the mask pattern filling the second trench and comprising a bottom anti-reflective coating (BARC); and removing the first conductive layer using the mask pattern. |
| 地址 |
Suwon-si KR |
