VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD

摘要

A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; a support portion provided below the shower plate inside the reaction chamber to place a substrate thereon; a process gas supply line that supplies a process gas; and a purging gas supply line that supplies a gas obtained by mixing first and second purging gases selected from hydrogen and an inert gas. Then, an inner area of the shower plate is provided with process gas ejection holes, and an outer area of the shower plate is provided with purging gas election holes. Then, the process gas supply line is connected to the process gas ejection holes, and the purging gas supply line is connected to the purging gas ejection holes.

主权项

1. A vapor phase growth apparatus comprising:
a reaction chamber; a support portion provided inside the reaction chamber, the support portion configured to place a substrate thereon; a first gas supply line supplying a first process gas; a second gas supply line supplying a second process gas; a purging gas supply line supplying a mixed gas obtained by mixing a first purging gas including at least one gas selected from hydrogen and an inert gas with a second purging gas including at least one gas selected from inert gases and having a molecular weight larger than that of the first purging gas; and a shower plate disposed in the upper portion of the reaction chamber, the shower plate configured to supply a gas into the reaction chamber, the shower plate including:
a plurality of first lateral gas passages connected to the first gas supply line, the first lateral gas passages being disposed within a first horizontal plane, the first lateral gas passages extending in parallel to each other,a plurality of first longitudinal gas passages connected to the first lateral gas passages, the first longitudinal gas passages extending in a longitudinal direction, the first longitudinal gas passages including first gas ejection holes, at a reaction chamber side of the shower plate,a plurality of second lateral gas passages connected to the second gas supply line, the second lateral gas passages being disposed within a second horizontal plane above the first horizontal plane, the second lateral gas passages extending in parallel to each other in the same direction as that of the first lateral gas passages,a plurality of second longitudinal gas passages connected to the second lateral gas passages, the second longitudinal gas passages extending in the longitudinal direction while passing between the first lateral gas passages, the second longitudinal gas passages including second gas ejection holes at the reaction chamber side of the shower plate, andpurging gas ejection holes connected to the purging gas supply line, the purging gas ejection holes being provided near the side wall of the reaction chamber in relation to the first and second gas ejection holes.