发明名称 REACTION DEVICE AND MANUFACTURE METHOD FOR CHEMICAL VAPOR DEPOSITION
摘要 A reaction device for chemical vapor deposition is disclosed. The reaction device includes a chamber, a susceptor, an inlet pipe unit and an outlet pipe. The susceptor is disposed within the chamber. The inlet pipe unit includes a plurality of feeding openings horizontally facing the peripheral area of the susceptor to input at least one reaction gas into the chamber. The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor. The outlet pipe includes a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.
申请公布号 US2014370689(A1) 申请公布日期 2014.12.18
申请号 US201314096390 申请日期 2013.12.04
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 PAN Yi-Tsung;YOUNG Mu-Jen
分类号 C23C16/44;H01L21/02 主分类号 C23C16/44
代理机构 代理人
主权项 1. A reaction device for chemical vapor deposition, comprising: a chamber; a susceptor disposed within the chamber; an inlet pipe unit comprising at least one feeding opening horizontally facing a peripheral area of the susceptor to input at least one reaction gas into the chamber, wherein the at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach a center of the susceptor; and an outlet pipe comprising a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.
地址 Hsinchu TW